PDTB113ET,215

PDTB113ET,215 datasheet

Маркировка

PDTB113ET,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PDTB113ET,215 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): 500nA Dc Current Gain (hfe) (min) @ Ic, Vce: 33 @ 50mA, 5V ID_COMPONENTS: 1947951 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Peak Dc Collector Current: 500 mA Power - Max: 250mW Resistor - Base (r1) (ohms): 1K Resistor - Emitter Base (r2) (ohms): 1K Transistor Polarity: PNP Transistor Type: PNP - Pre-Biased Typical Input Resistor: 1 KOhm Typical Resistor Ratio: 1 Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Switching - Resistor Biased RoHS: yes Collector- Emitter Voltage VCEO Max: 50 V Peak DC Collector Current: 500 mA Factory Pack Quantity: 3000 Part # Aliases: PDTB113ET T/R Other Names: 934058978215, PDTB113ET T/R
Количество страниц

10 шт.
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